期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 38, 页码 46117-46124出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c11328
关键词
MoS2; charge transfer; PTFE; photoluminescence; lifetime; p-doping
资金
- National Natural Science Foundation of China [21771040, 62074043]
- National Key Research and Development Program of China [2017YFA0207303, 2016YFA0203900]
Monolayer molybdenum disulfide (MoS2) transferred onto polytetrafluoroethylene (PTFE) substrate exhibited a strong p-doping effect and charge transfer, transforming its electronic structure into that of a hole-rich p-type semiconductor.
Pristine monolayer molybdenum disulfide (MoS2) demonstrates predominant and persistent n-type semiconducting polarity due to the natural sulfur vacancy, which hinders its electronic and optoelectronic applications in the rich bipolarity area of semiconductors. Current doping strategies in single-layer MoS2 are either too mild to reverse the heavily n-doped polarity or too volatile to create a robust electronic device meeting the requirements of both a long lifetime and compatibility for mass production. Herein, we demonstrate that MoS2 can be transferred onto polytetrafluoroethylene (PTFE), one of the most electronegative substrates. After transfer, the MoS2 photoluminescence exhibits an obvious blueshift from 1.83 to 1.89 eV and a prolonged lifetime, from 0.13 to 3.19 ns. The Fermi level of MoS2 experiences a remarkable 510 meV decrease, transforming its electronic structure into that of a hole-rich p-type semiconductor. Our work reveals a strong p-doping effect and charge transfer between MoS2 and PTFE, shedding light on a new nonvolatile strategy to fabricate p-type MoS2 devices.
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