High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO

High-resolution patterning of quantum dot (QD) films is one of the preconditions for the practical use of QD-based emissive display platforms. Recently, inkjet printing and transfer printing have been actively developed; however, high-resolution patterning is still limited owing to nozzle-clogging issues and coffee ring effects during the inkjet printing and kinetic parameters such as pickup and peeling speed during the transfer process. Consequently, employing direct optical lithography would be highly beneficial owing to its well-established process in the semiconductor industry; however, exposing the photoresist (PR) on top of the QD film deteriorates the QD film underneath. This is because a majority of the solvents for PR easily dissolve the preexisting QD films. In this study, we present a conventional optical lithography process to obtain solvent resistance by reacting the QD film surface with diethylzinc (DEZ) precursors using atomic layer deposition. It was confirmed that, by reacting the QD surface with DEZ and coating PR directly on top of the QD film, a typical photolithography process can be performed to generate a red/green/blue pixel of 3000 ppi or more. QD electroluminescence devices were fabricated with all primary colors of QDs; moreover, compared to reference QD-LED devices, the patterned QD-LED devices exhibited enhanced brightness and efficiency.

Automated summary

The study presents a conventional optical lithography process to enhance solvent resistance of QD films by reacting the QD film surface with diethylzinc (DEZ) precursors using atomic layer deposition. This allows for direct coating of photoresist (PR) on top of the QD film, enabling high-resolution patterning to be achieved. QD electroluminescence devices were fabricated, showing enhanced brightness and efficiency compared to reference QD-LED devices.