In2O3:H-Based Hole-Transport-Layer-Free Tin/Lead Perovskite Solar Cells for Efficient Four-Terminal All-Perovskite Tandem Solar Cells

Narrow-band gap (NBG) Sn-Pb perovskites with band gaps of similar to 1.2 eV, which correspond to a broad photon absorption range up to similar to 1033 nm, are highly promising candidates for bottom solar cells in all-perovskite tandem photovoltaics. To exploit their potential, avoiding optical losses in the top layer stacks of the tandem configuration is essential. This study addresses this challenge in two ways (1) removing the hole-transport layer (HTL) and (2) implementing highly transparent hydrogen-doped indium oxide In2O3 :H (IO:H) electrodes instead of the commonly used indium tin oxide (ITO). Removing HTL reduces parasitic absorption loss in shorter wavelengths without compromising the photovoltaic performance. IO:H, with an ultra-low near-infrared optical loss and a high charge carrier mobility, results in a remarkable increase in the photocurrent of the semitransparent top and (HTL-free) NBG bottom perovskite solar cells when substituted for ITO. As a result, an IO:H-based four-terminal all-perovskite tandem solar cell (4T all-PTSCs) with a power conversion efficiency (PCE) as high as 24.8% is demonstrated, outperforming ITO-based 4T all-PTSCs with PCE up to 23.3%.

Automated summary

This study demonstrates a significant increase in photocurrent for all-perovskite tandem solar cells by removing the hole-transport layer and using hydrogen-doped indium oxide electrodes. The IO:H-based solar cells achieved a higher power conversion efficiency compared to the commonly used ITO, highlighting the potential of utilizing this material in photovoltaic applications.