4.8 Article

Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 28, 页码 33226-33236

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c05254

关键词

defect engineering; SnSe nanosheets; Se vacancies; recombination dynamics; optoelectronic

资金

  1. China Postdoctoral Science Foundation [2020M682862]
  2. National Natural Science Foundation of China [61435010, 61905161, 61975134, 51702219]
  3. State Key Research Development Program of China [2019YFB2203503]
  4. National Defense Pre-Research Foundation of China [41422050303]
  5. Guangdong Basic and Applied Basi c Research Foundation [2019A1515110209]
  6. Innovation Team Project of Department of Education of Guangdong Province [2018KCXTD026]
  7. Science and Technology Innovation Commission of Shenzhen [JCYJ20170818093453105, JCYJ20180305125345378]

向作者/读者索取更多资源

Ultrathin lamellar SnSe with controlled Se defects were successfully synthesized using a Li intercalation-assisted liquid exfoliation method, demonstrating promising photoelectric performance for applications in photonics and photocatalysis.
Ultrathin lamellar SnSe is highly attractive for applications in areas such as photonics, photodetectors, photovoltaic devices, and photocatalysis, owing to its suitable band gap, exceptional light absorption capabilities, and considerable carrier mobility. On the other hand, SnSe nanosheets (NSs) still face challenges of being difficult to prepare and their devices having low photoelectric conversion efficiencies. Herein, ultrathin SnSe NSs with controlled Se defects were synthesized with high yield by a facial Li intercalation-assisted liquid exfoliation method. The loss of Se, a narrowing of the band gap, and an increase in lattice disorders involving vacancies, distortions, and phase transition were observed in SnSe NSs prepared with a long lithiation process. Comparing between the 24 and 72 h lithiation samples, the ones processed for a longer time displayed a faster recombination time due to more defect-induced mid-states. Inspiringly, enhancements of 4-10 times were observed for photodetector device parameters such as photocurrent, photoresponsivity, photoresponse speed, and specific detectivity of the 72 h lithiation SnSe NSs. Additionally, these devices show good stability and a broad detection range, from ultraviolet to the near infrared region. Our results provide a promising avenue for the mass production of SnSe NSs with high photoelectric performance and open up opportunities for applications in photonics, optoelectronics, and photocatalysis.

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