期刊
ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 30, 页码 36426-36435出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c06765
关键词
metal oxide; passivated contact; interface oxide; thermal stability; silicon solar cells
资金
- Australian Government through the Australian Renewable Energy Agency (ARENA)
- Australian Centre for Advanced Photovoltaics (ACAP) Postdoctoral Research Fellowship
- Qatar National Research Fund (QNRF) [NPRP9021-009]
The study examines the potential benefits of controlling the properties of the SiOx interlayer by introducing a pregrown high-quality SiOx, which inhibits the formation of low-quality SiOx during metal oxide deposition. It demonstrates that a high-quality pregrown SiOx reduces interfacial reaction, resulting in more stoichiometric MoOx with improved surface passivation and thermal stability.
Thin SiOx interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiOx layer, often only several atomic layers thick, becomes the interface between the Si and deposited metal oxide and can therefore influence the electrical properties and thermal stability of the deposited stack. This work explores the potential benefits of controlling the properties of the SiOx interlayer by the introduction of pregrown high-quality SiOx which also inhibits the formation of low-quality SiOx from the metal-oxide deposition process. This work demonstrates that a high-quality pregrown SiOx can reduce the interfacial reaction and results in a more stoichiometric MoOx with improved surface passivation and thermal stability linked to its lower Dit. Detailed experimental data on carrier selectivity, carrier transport efficiency, annealing stability up to 250 degrees C, and in-depth material analysis are presented.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据