High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene

Two-dimensional (2D) release layers are commonly used to realize flexible nitride films. Here, high-quality, large-area, and transferable nitride films can be precisely controlled grown on O-2-plasma-assisted patterned graphene. The first-principles calculation indicates that the patterned graphene introduced by O-2 plasma changes the original wettability of sapphire and the growth behavior of Al atoms is related with layer number of graphene, which is consistent with experimental results. The as-fabricated violet GaN-based light-emitting diodes (LEDs) show high stability and high light output power (LOP). This work provides a general rule for the growth of high-quality and transferable III-nitride films on graphene from the atomic scale and provide actual demonstration in LED. The advantages of the proposed new growth method can supply new ways for electronic and optoelectronic flexible devices of group III nitride semiconductors.

Automated summary

The use of O-2 plasma-assisted patterned graphene can change the wettability of sapphire surface and lead to precise control of the growth of large-area and transferable nitride films. Experimental results demonstrate that LEDs prepared using this method exhibit high stability and high light output power.