4.8 Article

Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 28, 页码 33244-33252

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c06618

关键词

synaptic device; resistive switching; short-term memory; reservoir computing; neuromorphic computing

资金

  1. National R&D Program through the National Research Foundation of Korea (NRF) - Mi n i s t r y of Science and ICT [2020M3F3A2A01082593, 2021R1C1C1004422]
  2. National Research Foundation of Korea [2021R1C1C1004422, 2020M3F3A2A01082593] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This study fabricates and characterizes a Ti/TiO2/Si device with different dopant concentrations for neuromorphic systems. The device exhibits interface-type bipolar resistive switching with long-term memory, and achieves pattern-recognition accuracy over 85% using conductance as weight in the network. Short-term memory characteristics are investigated, showing that dynamic range is controlled by pulse amplitude and conductance decay depends on pulse interval. A reservoir computing system is built using the short-term effect of the device, allowing differentiation of 16 states for pattern recognition.
In this study, we fabricate and characterize a Ti/TiO2/Si device with different dopant concentrations on a silicon surface for neuromorphic systems. We verify the device stack using transmission electron microscopy (TEM). The Ti/TiO2/p(++)Si device exhibits interface-type bipolar resistive switching with long-term memory. The potentiation and depression by the pulses of various amplitudes are demonstrated using gradual resistive switching. Moreover, pattern-recognition accuracy (>85%) is obtained in the neuromorphic system simulation when conductance is used as the weight in the network. Next, we investigate the short-term memory characteristics of the Ti/TiO2/p(+)Si device. The dynamic range is well-controlled by the pulse amplitude, and the conductance decay depends on the interval between the pulses. Finally, we build a reservoir computing system using the short-term effect of the Ti/TiO2/p(+)Si device, in which 4 bits (16 states) are differentiated by various pulse streams through the device that can be used for pattern recognition.

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