4.8 Article

Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO3 Thin Film Deposited in a Composition-Spread Geometry

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 13, 期 38, 页码 45679-45685

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c08758

关键词

composition-spread combinatorial study; ferroelectrics; thermal conductivity; phonon-scattering mechanisms; domain walls

资金

  1. Ministerio de Economia y Competitividad (Spain) [MAT2016-80762-R, PID2019-104150RB-100, PGC2018-097789-B-I00]
  2. Xunta de Galicia (Centro Singular de Investigacion de Galicia Accreditation 2019-2022) [ED431G 2019/03]
  3. European Union (European Regional Development Fund-ERDF)
  4. European Commission through the Horizon H2020 funding by H2020-MSCA-RISE-2016 [734187-SPICOLOST]
  5. European Union [MSCA-IF-GF-708129]
  6. MINECO (Spain) [2017079688]
  7. Army Research Office [W911NF-16-1-0315]
  8. National Science Foundation [Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)] [DMR-1539918]

向作者/读者索取更多资源

By analyzing the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film, this study identified ferroelectric domain walls and point defects as the main sources of phonon scattering. The research demonstrated that domain walls are as effective as point defects in limiting the thermal conductivity in the system.
We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film deposited in a composition-spread geometry enabling a continuous range of compositions from similar to 25% titanium deficient to similar to 20% titanium rich to be studied. By fitting the experimental results to the Debye model we deconvolute and quantify the two main phonon-scattering sources in the system: ferroelectric domain walls (DWs) and point defects. Our results prove that ferroelectric DWs are the main agent limiting the thermal conductivity in this system, not only in the stoichiometric region of the thin film ([Pb]/[Ti] approximate to 1) but also when the concentration of the cation point defects is significant (up to similar to 15%). Hence, DWs in ferroelectric materials are a source of phonon scattering at least as effective as point defects. Our results demonstrate the viability and effectiveness of using reconfigurable DWs to control the thermal conductivity in solid-state devices.

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