期刊
ACS APPLIED ENERGY MATERIALS
卷 4, 期 4, 页码 4090-4098出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaem.1c00448
关键词
black silicon (B-Si); CZTS nanocrystals; radial heterojunction; self-powered photodetector; photovoltaic devices
资金
- DST-Meity-supported NNetRA SWI Project, Government of India [IIT/SRIC/NT/SWI/2018-19/189]
A novel n-black Si (B-Si)/p-Cu2ZnSnS4 nanocrystal (CZTS NC) heterojunction has been fabricated for the first time, showing promising photodetection and photovoltaic characteristics. The solution-processed devices demonstrate high performance and compatibility for large area applications in the field of photodetection and energy harvesting.
We report, for the first time, the fabrication of n-black Si (B-Si)/p-Cu2ZnSnS4 nanocrystal (CZTS NC) heterojunctions to demonstrate their photodetection and photovoltaic characteristics. Inks with crystalline CZTS NCs can be directly spin coated on an ultralow reflective (<1.5% in the visible range) metal-assisted chemical-etched black Si to fabricate solution-processed B-Si/CZTS heterojunctions, with the process compatible for large area applications. Fabricated devices operate as self-powered visible to near infrared (vis-NIR) wideband photodetectors, with a high I-ph/I-dark ratio of similar to 10(5), a very fast switching speed (similar to mu s), and remarkably high figure-of-merits at zero bias. Furthermore, an optimal thickness of NC layers exhibits superior photovoltaic characteristics with an efficiency >5.0%, even without any surface passivation or encapsulation of the device. The combined studies show impactful potential of the B-Si/CZTS NC heterojunction for future high-speed light-sensing and energy-harvesting devices using solution-processed techniques compatible to large area applications.
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