Copper-graphene heterostructure for back-end-of-line compatible high-performance interconnects

Here, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 degrees C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >10(6) s at 100 degrees C under a continuous DC stress of 3 MA cm(-2). Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).

Automated summary

The study demonstrates the fabrication of a Cu-graphene heterostructure interconnect by synthesizing graphene directly on a Cu interconnect, resulting in enhanced electrical properties and reliability compared to pure Cu interconnects. The doping of graphene to increase carrier density significantly improves the reliability of the graphene-capped interconnect, showing compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).