Utilization of Nanoporous Nickel Oxide as the Hole Injection Layer for Quantum Dot Light-Emitting Diodes

Nickel oxide (NiOx) has been extensively investigated as the hole injection layer (HIL) for many optoelectronic devices because of its excellent hole mobility, high environmental stability, and low-cost fabrication. In this research, a NiOx thin film and nanoporous layers (NPLs) have been utilized as the HIL for the fabrication of quantum dot light-emitting diodes (QLEDs). The obtained NiOx NPLs have spongelike nanostructures that possess a larger surface area to enhance carrier injection and to lower the turn-on voltage as compared with the NiOx thin film. The energy levels of NiOx were slightly downshifted by incorporating the nanoporous structure. The amount of Ni2O3 species is higher than that of NiO in the NiOx NPL, confirming its good hole transport ability. The best QLED was achieved with a 30 nm thick NiOx NPL, exhibiting a maximum brightness of 68 646 cd m(-2), a current efficiency of 7.60 cd A(-1), and a low turn-on voltage of 3.4 V. More balanced carrier transport from the NiOx NPL and ZnO NPs/polyethylenimine ethoxylated (PEIE) is responsible for the improved device performance.

Automated summary

NiOx thin film and nanoporous layers (NPLs) were used as the hole injection layer (HIL) for quantum dot light-emitting diodes (QLEDs), showing improved device performance with higher carrier injection and lower turn-on voltage. The presence of more Ni2O3 species in NiOx NPL confirmed its good hole transport ability. The best QLED achieved had a 30 nm thick NiOx NPL, demonstrating high brightness, current efficiency, and low turn-on voltage.