Theoretical study of GaN (0001) surface reconstructions and La and Ga adatoms under N- and Ga-rich conditions

Using density functional theory, we determined that 2x2 and (root 3x root 3)R30 degrees surface reconstructions of bulk-terminated GaN (0001) are degenerate in energy but differ in their electronic structure. Consistent with previous reports, our study of the adsorption energy of Ga adatoms shows that a laterally contracted Ga bilayer is the most energetically favorable surface arrangement under Ga-rich conditions, albeit with a different atomic arrangement of the Ga bilayer than previously reported. We also determined the potential energy surfaces for La and Ga adatoms on bulk-terminated GaN (0001) surface and for a La adatom on a bulk-terminated GaN (0001) covered by a contracted Ga bilayer and discuss possible adatom surface migration paths. An exchange reaction of a La adatom with surface Ga was found to be energetically favorable for both the bulk-terminated and the Ga bilayer-covered surfaces, indicating formation of LaN. A careful study of the diffusion of a La adatom through the Ga bilayer toward the bulk-terminated GaN surface suggests that a lower energy arrangement is achieved when the La adatom exchanges positions with a surface Ga atom. This indicates that LaGa2 and LaN are potential materials to form a transition layer to facilitate epitaxial integration of oxides on GaN.

Automated summary

Using density functional theory, the study examines the surface reconstructions and electronic properties of bulk-terminated GaN (0001), concluding that a laterally contracted Ga bilayer is the most energetically favorable surface arrangement under Ga-rich conditions. The study also suggests LaGa2 and LaN as potential materials for forming a transition layer to facilitate epitaxial integration of oxides on GaN.