4.3 Article

Electronic structure of 3°-twisted bilayer graphene on 4H-SiC(0001)

期刊

PHYSICAL REVIEW MATERIALS
卷 5, 期 5, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.5.L051001

关键词

-

资金

  1. JSPS [JP18H01146, JP19H02595, JP20K21119, 20H05179]
  2. PF-PAC Grants [2017G575, 2019G632]
  3. Grants-in-Aid for Scientific Research [20H05179] Funding Source: KAKEN

向作者/读者索取更多资源

The electronic structure of 3 degrees-twisted bilayer graphene was studied using ARPES, showing that strong interlayer coupling significantly modifies the Dirac electrons' properties. The observed electronic structure was consistently reproduced by tight-binding calculations and band unfolding method.
The electronic structure of 3 degrees-twisted bilayer graphene (TBG) is studied by angle-resolved photoelectron spectroscopy (ARPES). Sub-mm-sized TBG prepared by direct bonding in a high vacuum enabled us to use conventional ARPES band mapping with synchrotron light. The results indicate that strong interlayer coupling makes a moire potential for the Dirac electrons and significantly modifies the graphene bands around the (K) over bar points such as the band splitting and electron velocity reduction. The observed electronic structure is consistently reproduced by tight-binding calculations combined with a band unfolding method.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.3
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据