期刊
NPJ COMPUTATIONAL MATERIALS
卷 7, 期 1, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41524-021-00518-4
关键词
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资金
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [16/14011-2, 17/18139-6, 18/11856-7, 18/05565-0, 17/02317-2]
- Fundacao de Amparo a Pesquisa do Estado de Sao Paulo (FAPESP) [18/11856-7, 16/14011-2] Funding Source: FAPESP
The article introduces the discovery and application of higher-order topological insulators and explores the connection between spin Hall effect and HOTIs, proposing a new method to identify HOTIs by studying the spin Hall conductivity (SHC).
The discovery and realization of topological insulators, a phase of matter which hosts metallic boundary states when the d-dimension insulating bulk is confined to (d - 1)-dimensions, led to several potential applications. Recently, it was shown that protected topological states can manifest in (d - 2)-dimensions, such as hinge and corner states for three- and two-dimensional systems, respectively. These nontrivial materials are named higher-order topological insulators (HOTIs). Here we show a connection between spin Hall effect and HOTIs using a combination of ab initio calculations and tight-binding modeling. The model demonstrates how a non-zero bulk midgap spin Hall conductivity (SHC) emerges within the HOTI phase. Following this, we performed high-throughput density functional theory calculations to find unknown HOTIs, using the SHC as a criterion. We calculated the SHC of 693 insulators resulting in seven stable two-dimensional HOTIs. Our work guides novel experimental and theoretical advances towards higher-order topological insulator realization and applications.
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