2D/3D perovskite engineering eliminates interfacial recombination losses in hybrid perovskite solar cells

Interface engineering and design is paramount in the optimization of a multilayer device stack. This stands true for multi-dimensional (2D/3D) perovskite-based solar cells, in which high efficiency can be combined with promising device durability. However, the complex function of the 2D/3D device interfaces remains vague. Here, we provide the exact knowledge on the interface energetics and demonstrate that the 2D/3D perovskite interface forms a p-n junction that is capable of reducing the electron density at the hole transport layer interface and ultimately suppresses interfacial recombination. As a consequence, we demonstrate photovoltaic devices with an enhanced fill factor (FF) and open-circuit voltage (V-OC) of 1.19 V, which approaches the potential internal quasi-Fermi level splitting (QFLS) voltage of the perovskite absorber, nullifying the interfacial losses. We thus identify the essential parameters and energetic alignment scenario required for 2D/3D perovskite systems to surpass the current limitations of hybrid perovskite solar cell performances.

Automated summary

The study emphasizes the importance of interface engineering and design in optimizing multilayer device stacks, particularly in addressing interface issues in 2D/3D perovskite solar cells. It proposes methods to enhance device efficiency and stability by understanding the interface energetics and forming a p-n junction.