相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Deep-level defects in gallium oxide
Zhengpeng Wang et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Self-trapped hole and impurity-related broad luminescence in β-Ga2O3
Y. K. Frodason et al.
JOURNAL OF APPLIED PHYSICS (2020)
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
Jiaye Zhang et al.
APL MATERIALS (2020)
Stable Low Electron Concentration β-Ga2O3 Films Grown by Metal-Organic Chemical Vapor Deposition
Teng Jiao et al.
ECS Journal of Solid State Science and Technology (2020)
Characterization and photoluminescence of Sn-doped ?-Ga 2 O 3 nanowires formed by thermal evaporation
Chih-Chiang Wang et al.
CHEMICAL PHYSICS LETTERS (2020)
Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD
Zeming Li et al.
VACUUM (2020)
Low pressure chemical vapor deposition of β-Ga2O3 thin films: Dependence on growth parameters
Zixuan Feng et al.
APL MATERIALS (2019)
High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector
Jiang Wang et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2019)
A survey of acceptor dopants for beta-Ga2O3
John L. Lyons
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers
Jiancheng Yang et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2018)
A review of Ga2O3 materials, processing, and devices
S. J. Pearton et al.
APPLIED PHYSICS REVIEWS (2018)
Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence
Yunshan Wang et al.
SCIENTIFIC REPORTS (2018)
Origin of photoluminescence in ss-Ga2O3
Quoc Duy Ho et al.
PHYSICAL REVIEW B (2018)
Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS (2016)
High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
Akito Kuramata et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
Andrew M. Armstrong et al.
JOURNAL OF APPLIED PHYSICS (2016)
Homogeneous alignment of liquid crystals on low-temperature solution-derived gallium oxide films via IB irradiation method
Sang Bok Jang et al.
LIQUID CRYSTALS (2016)
Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
D. Gogova et al.
CRYSTENGCOMM (2015)
High-performance single crystalline UV photodetectors of β-Ga2O3
Mianzeng Zhong et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2015)
Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD
Xuejian Du et al.
JOURNAL OF MATERIALS SCIENCE (2015)
Brillouin zone and band structure of β-Ga2O3
Hartwin Peelaers et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy
Hisashi Murakami et al.
Applied Physics Express (2015)
Structuring β-Ga2O3 Photonic Crystal Photocatalyst for Efficient Degradation of Organic Pollutants
Xiaofang Li et al.
ENVIRONMENTAL SCIENCE & TECHNOLOGY (2013)
Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals
Kiyoshi Shimamura et al.
APPLIED PHYSICS LETTERS (2008)
Steady-state and transient electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A review
SK O'Leary et al.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2006)
Large-size β-Ga2O3 single crystals and wafers
EG Víllora et al.
JOURNAL OF CRYSTAL GROWTH (2004)