Stable Electron Concentration Si-doped β-Ga2O3 Films Homoepitaxial Growth by MOCVD

To obtain high-quality n-type doped beta-Ga2O3 films, silane was used as an n-type dopant to grow Si-doped beta-Ga2O3 films on (100) beta-Ga2O3 substrates by metal-organic chemical vapor deposition (MOCVD). The electron concentrations of the Si-doped beta-Ga2O3 films obtained through experiments can be stably controlled in the range of 6.5 x 10(16) cm(-3) to 2.6 x 10(19) cm(-3), and the ionization energy of Si donors is about 30 meV, as determined by analysis and calculation. The full width at half maxima of the rocking curves of the (400) crystal plane of all doped films was less than 500 arcsec, thus showing high crystal quality, while the increase of the doping concentration increased the defect density in the beta-Ga2O3 films, which had an adverse effect on the crystal quality and surface morphology of the films. Compared with heteroepitaxial Si-doped beta-Ga2O3 films, homoepitaxial Si-doped beta-Ga2O3 films exhibited higher quality, lower defect density, and more stable electron concentration, which make them more conductive for preparing Ga2O3-based power devices.

Automated summary

The use of silane as an n-type dopant for Si-doped beta-Ga2O3 films grown on (100) beta-Ga2O3 substrates via MOCVD allows for stable control of electron concentrations, with higher quality and lower defect density observed in homoepitaxial compared to heteroepitaxial films. Increasing doping concentration may adversely affect defect density and surface morphology of the films.