Crystal structure and thermoelectric performance of p-type Bi0.86Ba0.14CuSeO/Cu2-ySe composites

Bi0.86Ba0.14CuSeO/xCu(2-y)Se (0.05 <= x <= 0.15; y = 0 and 0.2) composites were fabricated by spark plasma sintering, and the crystal structure and thermoelectric properties of the Bi0.86Ba0.14CuSeO/xCu(2-y)Se composites were studied. The composites contained Cu2-ySe (y = 0 and 0.2) nanoinclusions in a tetragonal Bi0.86Ba0.14CuSeO matrix. To increase the electrical conductivities of Bi0.86Ba0.14CuSeO, we introduced Cu2-ySe nanoinclusions with a high electrical conductivity into the matrix. The introduction of Cu2-ySe nanoinclusions reduced the structural distortion of CuSe4 tetrahedra and the effective mass, thereby enhancing the carrier mobility. A significant increase in electrical conductivities was achieved with increasing Cu2-ySe nanoinclusion, i.e., 117, 165, and 214 Omega(-1)cm(-1 )at 673 K for x = 0.05, 0.10, and 0.15 composites. The Cu2-ySe nanoinclusions reduced the lattice thermal conductivity because they strengthened the long-wavelength phonon scattering at the Bi0.86Ba0.14CuSeO/Cu2-ySe interface. The largest dimensionless figure-of-merit (0.33 at 673 K) was obtained for x = 0.15 composite, which was attributed to the highest electrical conductivity and the lowest lattice thermal conductivity. (C) 2021 The Author(s). Published by Elsevier B.V.

Automated summary

By introducing Cu2-ySe nanoinclusions into the Bi0.86Ba0.14CuSeO matrix, the electrical conductivity and thermoelectric properties can be improved while reducing lattice thermal conductivity, leading to enhanced thermoelectric performance. Increasing the content of Cu2-ySe significantly boosts the electrical conductivity of the composite materials, with the best dimensionless figure-of-merit achieved at x = 0.15.