Structure, magnetic and dielectric correlations in indium-doped gallium ferrite

Indium doped GaFeO3 (Ga1-xInxFeO3, 0 < x < 0.25) samples were synthesized by the ceramic's procedure. The correlation between lattice parameter, different ions occupancies between different sites and the octahedral and tetrahedral distortion of indium doped GaFeO3 were studied in detail. Zero field cooled (ZFC) and field cooled (FC) magnetization measurements revealed that all samples exhibited a ferrimagnetic to paramagnetic phase transition below room temperature. Applying the law of approach to saturation, the 10% indium doped GaFeO3 sample revealed the highest saturation magnetization than the other samples. The dielectric constant (epsilon'), dielectric loss (tan delta), ac-conductivity, complex impedance parts and the hopping probability of electrons variation with temperature and frequency were studied in detail at different values of indium doping in GaFeO3 sample. The influence of doping on the activation energy of the conduction process was also investigated. Impedance Nyquist plot was used to differentiate between the grain and grain boundary contribution in indium doped GaFeO3 samples.

Automated summary

Indium doped GaFeO3 samples were synthesized using the ceramic procedure and the correlation between various properties such as lattice parameter and magnetic behavior was studied. Results showed that the 10% indium doped GaFeO3 sample exhibited the highest saturation magnetization. Additionally, the influence of doping on the conduction process activation energy was investigated, and impedance Nyquist plot was used to differentiate between grain and grain boundary contributions in the samples.