Probing and passivating electron traps at the MAPbI3/TiO2 interface

We developed a test platform structure to probe interfacial charge transport/transfer at the methyl-ammonium lead iodide (MAPbI(3))/TiO2 interface, demonstrating that trap density in the MAPbI(3) close to TiO2 is far lower than that without TiO2, evidenced from the gate voltage-dependent threshold voltage difference based on field effect transistor (FET) structure. We found that the TiO2 layer plays a crucial role in electronic passivation of the SiO2 surface, while a rough surface suppresses efficient charge transport at a large area between the source and drain electrodes.

Automated summary

The study reveals that trap density near the MAPbI(3)/TiO2 interface is significantly lower, while the TiO2 layer plays a crucial role in electronic passivation on the SiO2 surface. However, a rough surface suppresses efficient charge transport.