4.6 Article

Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films

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Summary: Investigating the effects of H+ ion irradiation on a chalcogenide Cu(In,Ga)Se-2 (CIGS) thin film revealed a conversion from p- to n-type conductivity, induced by strong surface band bending and ultrafast behavior of photocarriers. The use of optical pump THz probe spectroscopy further showed the ultrafast photocarrier dynamics at surface and bulk defect states, indicating H+ ion irradiation pacifies Cu vacancy defects while generating new defect states.

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