Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films

HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material's inherent fatigue properties have limited its potential for device application. This paper systematically investigates the effects of tensile stress and annealing temperature on the endurance and ferroelectric properties faced by Zr-doped HfO2 ferroelectric film. The remnant polarization (P-r) shows an increasing trend with annealing temperature, while the change in the coercive electric field (E-c) is not obvious in terms of the relationship with tensile stress or annealing temperature. In addition, the application of tensile stress does help to improve the endurance characteristics by about two orders of magnitude for the ferroelectric material, and the endurance properties show a tendency to be negatively correlated with annealing temperature. Overall, although the effect of stress on the ferroelectricity of a HZO material is not obvious, it has a great influence on its endurance properties and can optimize the endurance of the material, and ferroelectricity exhibits a higher dependence on temperature. The optimization of the endurance properties of HZO materials by stress can facilitate their development and application in future integrated circuit technology.

Automated summary

This study investigates the effects of tensile stress and annealing temperature on Zr-doped HfO2 ferroelectric film properties, revealing that tensile stress significantly improves material endurance, while remnant polarization increases with annealing temperature.