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A. F. M. Anhar Uddin Bhuiyan et al.
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Ab initio study of enhanced thermal conductivity in ordered AlGaO3 alloys
Sai Mu et al.
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Hartwin Peelaers et al.
APPLIED PHYSICS LETTERS (2018)
Recent progress in the growth of β-Ga2O3 for power electronics applications
Michele Baldini et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
Identification and modulation of electronic band structures of single-phase β-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy
Jing Li et al.
APPLIED PHYSICS LETTERS (2018)
Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of beta-(Al-x,Ga1-x)(2)O-3/beta-Ga2O3 heterostructures
Patrick Vogt et al.
APPLIED PHYSICS EXPRESS (2018)
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Michael A. Mastro et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
State-of-the-art technologies of gallium oxide power devices
Masataka Higashiwaki et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2017)
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Sriram Krishnamoorthy et al.
APPLIED PHYSICS LETTERS (2017)
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
Subrina Rafique et al.
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Recent progress in Ga2O3 power devices
Masataka Higashiwaki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Lattice parameters and Raman-active phonon modes of β-(AlxGa1-x)2O3
Christian Kranert et al.
JOURNAL OF APPLIED PHYSICS (2015)
β-(AlxGa1-x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy
Stephen W. Kaun et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2015)
Wide bandgap engineering of (AlGa)2O3 films
Fabi Zhang et al.
APPLIED PHYSICS LETTERS (2014)
Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
Baishakhi Mazumder et al.
APPLIED PHYSICS LETTERS (2013)
The influence of Al composition on point defect incorporation in AlGaN
T. A. Henry et al.
APPLIED PHYSICS LETTERS (2012)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
A. R. Arehart et al.
JOURNAL OF APPLIED PHYSICS (2011)
Hydrogenated cation vacancies in semiconducting oxides
J. B. Varley et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2011)
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
S. E. Bennett et al.
ULTRAMICROSCOPY (2011)
β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
Takayoshi Oshima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN
K Watanabe et al.
APPLIED PHYSICS LETTERS (2003)
Deep-ultraviolet transparent conductive β-Ga2O3 thin films
M Orita et al.
APPLIED PHYSICS LETTERS (2000)
A climbing image nudged elastic band method for finding saddle points and minimum energy paths
G Henkelman et al.
JOURNAL OF CHEMICAL PHYSICS (2000)