期刊
ADVANCED ELECTRONIC MATERIALS
卷 7, 期 5, 页码 -出版社
WILEY
DOI: 10.1002/aelm.202100145
关键词
dipole alignment; ferroelectric HfZrO; graphene FETs; short pulse I– V; transient charging
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2020R1I1A1A01060352]
- National R&D program through the National Research Foundation of Korea (NRF) - Ministry of Science and ICT, Korea [2020M3F3A2A02082436]
- National Research Foundation of Korea [2020M3F3A2A02082436, 2020R1I1A1A01060352] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A novel method is developed to analyze the ferroelectric switching behaviors of Hf0.5Zr0.5O2 (HZO) gate dielectric using the unique charge response characteristics of graphene field effect transistor (GFET). The trans-conductance of GFET with ferroelectric HZO is observed to be increased by 610% in DC measurement with minimal hysteresis, while fast pulse I-V analysis reveals that the improved swing and small hysteresis are the result of compensation between bulk charge trapping and dipole charges.
A novel method to analyze the ferroelectric switching behaviors of Hf0.5Zr0.5O2 (HZO) gate dielectric is developed using the unique charge response characteristics of graphene field effect transistor (GFET). The linear density of state of graphene in a low V-g region enables a detailed transient analysis of the effects of transient charging and dipole switching. The trans-conductance of GFET with ferroelectric HZO is observed to be increased by 610% in DC measurement with a minimal hysteresis as reported for negative capacitance FET. However, fast pulse I-V analysis reveals that the improved swing and small hysteresis of GFET with ferroelectric HZO are the result of compensation between the bulk charge trapping and dipole charges.
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