Quantum Transport in Monolayer α-CS Field-Effect Transistors

2D puckered materials similar to black phosphorene (BP) have tunable electronic structures, high mobility, and anisotropy, and are expected to become possible candidate channels for post-silicon field-effect transistors (FETs). Herein, monolayer alpha-CS with puckered structure is evaluated as a promising channel material for sub-5 nm FETs by using first principle quantum transport simulation. Monolayer alpha-CS FETs can satisfy the requirements of the International Technology Roadmap for Semiconductors (ITRS) for high-performance (HP) and low-power (LP) applications. The on-state current can reach 3700 mu A mu m(-1) for HP FET at 5 nm channel length and the on-off ratio of LP FET is exceeding 10(7), both superior to those of other 2D channels like BP and InSe. The results suggest that alpha-CS as a competitive channel material opens a new avenue for the future electronic technology in the upcoming Internet of Things.

Automated summary

The study found that monolayer puckered alpha-CS as a channel material has high potential for sub-5 nm FETs, meeting the requirements for high performance and low power consumption.