All-Amorphous Junction Field-Effect Transistors Based on High-Mobility Zinc Oxynitride

This report is on the electrical properties of all-amorphous junction field-effect transistors (JFETs) based on n-type zinc oxynitride (ZnON) as a channel material and room-temperature deposited p-type ZnCo2O4 (ZCO) as a heterojunction gate. Devices with different channel thicknesses are thereby compared. Best devices with 48 nm channel layer thickness achieve drain current on/off-ratios of 10(5) and low subthreshold swing of 134 mV dec(-1) within a gate voltage sweep of less than 2 V. The channel mobility extraction is reliable for 90 nm-thick channels yielding saturation mobility values over 50 cm(2) V-1 s(-1). For JFETs with 48 nm-thick channels an overestimation of the saturation mobility due to deviations from the ideal transistor characteristics is determined.

Automated summary

This report focuses on the electrical properties of all-amorphous JFETs based on n-type ZnON and p-type ZCO, comparing devices with different channel thicknesses. The best devices with a 48 nm channel layer thickness show superior performance, including high on/off-ratios and low subthreshold swing.