4.6 Article

Quantum electronic transport across 'bite' defects in graphene nanoribbons

期刊

2D MATERIALS
卷 8, 期 3, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/abf716

关键词

graphene nanoribbons; defects; electronic transport; on-surface synthesis; DFT calculations

资金

  1. Swiss National Science Foundation [172543, 20PC21-155644]
  2. NCCR MARVEL
  3. Swiss National Science Foundation through the Early Postdoc. Mobility program [P2ELP2-191706]
  4. European Union Horizon 2020 research and innovation program [785219]
  5. Office of Naval Research BRC Program [N00014-121-1009]
  6. Swiss National Supercomputing Center (CSCS) [s1008]
  7. Swiss National Science Foundation (SNF) [P2ELP2_191706, 20PC21_155644] Funding Source: Swiss National Science Foundation (SNF)

向作者/读者索取更多资源

The study reveals the ubiquitous presence of 'bite' defects in on-surface synthesized graphene nanoribbons, which significantly disrupt the quantum charge transport properties. Through experimental visualization and first-principles calculations, it is shown that these imperfections have a strong detrimental effect on the conduction properties, leading to the establishment of practical guidelines to minimize their impact on charge transport.
On-surface synthesis has recently emerged as an effective route towards the atomically precise fabrication of graphene nanoribbons (GNRs) of controlled topologies and widths. However, whether and to what degree structural disorder occurs in the resulting samples is a crucial issue for prospective applications that remains to be explored. Here, we experimentally visualize ubiquitous missing benzene rings at the edges of 9-atom wide armchair nanoribbons that form upon cleavage of phenyl groups in the precursor molecules. These defects are referred to as 'bite' defects. First, we address their density and spatial distribution on the basis of scanning tunnelling microscopy and find that they exhibit a strong tendency to aggregate. Next, we explore their effect on the quantum charge transport from first-principles calculations, revealing that such imperfections substantially disrupt the conduction properties at the band edges. Finally, we generalize our theoretical findings to wider nanoribbons in a systematic manner, hence establishing practical guidelines to minimize the detrimental role of such defects on the charge transport. Overall, our work portrays a detailed picture of 'bite' defects in bottom-up armchair GNRs and assesses their effect on the performance of carbon-based nanoelectronic devices.

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