High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 degrees C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (Delta V-th) of 13.7 V when it sweeps from -20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (+/- 20 V, duration of 100 ms) and reliable retention time up to 10(4) s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.

Automated summary

The research presents a low-temperature processed three-terminal thin-film transistor non-volatile memory device using indium gallium zinc oxide semiconductor and gold nanoparticles as a floating gate layer, achieving reliable memory operations with a high memory window and stable endurance. The device demonstrates excellent properties in terms of large memory window, stable endurance, and long retention time, showing promising applications in futuristic non-volatile memory technology.