4.7 Article

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

期刊

NANOMATERIALS
卷 11, 期 3, 页码 -

出版社

MDPI
DOI: 10.3390/nano11030788

关键词

in-plane nanowire; site-controlled; epitaxial growth; silicon; germanium; nanowire-based quantum devices

资金

  1. National Key R&D Program of China [2016YFA0301701]
  2. NSFC [11574356, 11434010, 11404252]
  3. Strategic Priority Research Program of CAS [XDB30000000]

向作者/读者索取更多资源

Controllable growth of wafer-scale in-plane nanowires is demonstrated by introducing molecular beam epitaxy on patterned Si structures, resulting in highly homogeneous Si, SiGe, and Ge/Si core/shell NW arrays with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed, confirming the high quality of these epitaxial NWs through characterizations including high resolution transmission electron microscopy.
Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

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