Improving Ultraviolet Responses in Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Using Quantum Dot-Based Luminescent Down-Shifting Layer

Quantum dot (QD)-based luminescent down-shifting (LDS) layers were deposited on Cu2ZnSn(S,Se)(4) (CZTSSe) solar cells via the drop-casting method. The LDS layers can easily widen the narrow absorption wavelength regions of single-junction solar cells and enable improvement of the short-circuit current. The optical properties of LDS layers deposited on glass and containing different QD contents were analyzed based on their transmittance, reflectance, and absorbance. The absorber films to be used in the CZTSSe solar cells were determined by X-ray diffraction measurements and Raman spectroscopy to determine their crystal structures and secondary phases, respectively. The completed CZTSSe solar cells with LDS layers showed increased ultraviolet responses of up to 25% because of wavelength conversion by the QDs. In addition, the impact of the capping layer, which was formed to protect the QDs from oxygen and moisture, on the solar cell performance was analyzed. Thus, a maximal conversion efficiency of 7.3% was achieved with the 1.0 mL QD condition; furthermore, to the best of our knowledge, this is the first time that LDS layers have been experimentally demonstrated for CZTSSe solar cells.

Automated summary

By depositing quantum dot-based luminescent down-shifting layers on CZTSSe solar cells, the UV response and short-circuit current of the cells were enhanced, resulting in a maximum conversion efficiency of 7.3%. This study also demonstrated the experimental application of LDS layers for CZTSSe solar cells for the first time.