4.7 Article

In Situ Local Oxidation of SnO Induced by Laser Irradiation: A Stability Study

期刊

NANOMATERIALS
卷 11, 期 4, 页码 -

出版社

MDPI
DOI: 10.3390/nano11040976

关键词

tin oxide; SnO; laser irradiation; phase transition; X-ray diffraction; romarchite

资金

  1. Spanish Ministry of Innovation, Science, and Technology
  2. Spanish Ministry of Economy [RTI2018-097195-B-I00]
  3. European Union's Horizon 2020 research and innovation program [957225]

向作者/读者索取更多资源

In this study, semiconductor tin oxide (II) (SnO) nanoparticles and plates were synthesized at room conditions via a hydrolysis procedure. The controlled oxidation process from SnO to SnO2 was studied, and insights were gained through photoluminescence and Raman spectroscopy. Finally, a tailored spatial SnO/SnO2 micropatterning was achieved with potential applicability in optoelectronics and sensing devices.
In this work, semiconductor tin oxide (II) (SnO) nanoparticles and plates were synthesized at room conditions via a hydrolysis procedure. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the high crystallinity of the as-synthesized romarchite SnO nanoparticles with dimensions ranging from 5 to 16 nm. The stability of the initial SnO and the controlled oxidation to SnO2 was studied based on either thermal treatments or controlled laser irradiation using a UV and a red laser in a confocal microscope. Thermal treatments induced the oxidation from SnO to SnO2 without formation of intermediate SnOx, as confirmed by thermodiffraction measurements, while by using UV or red laser irradiation the transition from SnO to SnO2 was controlled, assisted by formation of intermediate Sn3O4, as confirmed by Raman spectroscopy. Photoluminescence and Raman spectroscopy as a function of the laser excitation source, the laser power density, and the irradiation duration were analyzed in order to gain insights in the formation of SnO2 from SnO. Finally, a tailored spatial SnO/SnO2 micropatterning was achieved by controlled laser irradiation with potential applicability in optoelectronics and sensing devices.

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