High-Performance Large-Scale Vertical 1T'/2H Homojunction CVD-Grown Polycrystalline MoTe2 Transistors

2D transition metal dichalcogenides (TMDs) have emerged as an ideal alternative to silicon in advanced electronics. Especially, MoTe2 attracts peculiar attention since it offers a unique opportunity of resolving critical electrical contacts. Currently, although MoTe2-based coplanar semiconductor-metal circuitry realized by epitaxial growth and chemical assembly has been demonstrated, while still suffers from the requirement of extremely accurate synthesis process control. Here, a facile strategy is demonstrated to fabricate large scale and high performance MoTe2 transistors with a 1T'/2H vertical homojunction structure by combining a spatial and phase controlled MoTe2 scalable synthesis and a scalable universal transfer method with water-soluble poly-vinylpyrrolidone and poly-(vinyl alcohol) bilayer mediator. Both high quality 1T'- and 2H- MoTe2 with controlled dimensions can be scalable synthesized via a shadow mask assisted chemical vapor deposition method. These as-synthesized MoTe2 patterns can be successfully transferred to a wide range of substrates at a high yield >80% with well-retained properties to construct transistors with a complex vertical 1T'/2H-MoTe2/HfAlO2 structure. The devices exhibit an on/off current ratio surpassing 10(4) and a typical mobility of approximate to 29 cm(2 )V(-1 )s(-1). The developed scaled strategy of combining both scalable MoTe2 synthesis and transfer offers a feasible way for potential MoTe2-based large-scale electronics.

Automated summary

A scalable strategy combining MoTe2 synthesis and transfer methods has been demonstrated to fabricate large-scale and high-performance MoTe2 transistors, offering a feasible way for potential MoTe2-based large-scale electronics.