Clarifying Ultrafast Carrier Dynamics in Ultrathin Films of the Topological Insulator Bi2Se3 Using Transient Absorption Spectroscopy

Ultrafast carrier dynamics in the topological insulator Bi2Se3 have recently been intensively studied using a variety of techniques. However, we are not aware of any successful experiments exploiting transient absorption (TA) spectroscopy for these purposes. Here we demonstrate that if the similar to 730 nm wavelength pumping (similar to 1.7 eV photon energy) is applied to ultrathin Bi2Se3 films, TA spectra cover the entire visible region, thus unambiguously pointing to two-photon excitation (similar to 3.4 eV). The carrier relaxation dynamics is found to be governed by the polar optical phonon cascade emission occurring in both the bulk states and the Dirac surface states (SS), including SS-bulk-SS vertical electron transport and being also exclusively influenced by whether the Dirac point is presented between the Dirac cones of the higher energy (similar to 1.5 eV) Dirac SS (known as SS2). We have recognized that SS2 act as a valve substantially slowing down the relaxation of electrons when the gap between Dirac cones exceeds the polar optical phonon and resonant defect energies. The resulting progressive accumulation of electrons in the gapped SS2 becomes detectable through the inverse-bremsstrahlung-type free carrier absorption.

Automated summary

Using transient absorption spectroscopy, researchers demonstrate that ultrafast carrier dynamics in ultrathin Bi2Se3 films are driven by two-photon excitation and polar optical phonon cascade emission, with the relaxation dynamics being influenced by the Dirac surface states and the presence of Dirac cones with different energies. The results suggest that a specific Dirac surface state acts as a valve, affecting the relaxation of electrons, resulting in detectable free carrier absorption.