期刊
ACS PHOTONICS
卷 8, 期 4, 页码 1041-1047出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.1c00211
关键词
nanoporous; gallium nitride; VCSEL; polarization locking; birefringence; DBR
类别
资金
- IP Group, Inc.
- NRF of Korea [NRF-2014R1A6A1030419]
This paper introduces a technique using birefringent nanoporous DBRs to achieve polarization locking in GaN VCSELs, overcoming the challenge of laser polarization control, demonstrating a fully electrically injected blue VCSEL. This technique allows the definition of polarization angles in a planar array, opening up possibilities for novel applications.
III-Nitride vertical-cavity surface-emitting lasers (VCSELs) have attracted much attention during the last two decades. Control of the laser polarization in VCSELs is one of the main challenges that needs to be addressed for real applications. In this work a novel polarization locking technique for GaN VCSELs is presented by employing birefringent nanoporous distributed Bragg reflectors (DBRs). The birefringence arises from a nanophotonic effect of evanescent field enhancement in the anisotropically aligned nanopores. Furthermore, the birefringence dependence over the nanopores morphology is explored. A fully electrically injected blue VCSEL with polarization locking is demonstrated. As presented, this technique allows to individually define the polarization angle in a planar array, opening the path to novel applications.
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