Mechanoplastic tribotronic two-dimensional multibit nonvolatile optoelectronic memory

The multi-bit nonvolatile memory based on two-dimensional material is promising for the future semiconductor industry due to the request of device?s miniaturization and structure flexibility. Here, we report a novel MoS2 nonvolatile memory combined with nanographene as floating gate realize multilevel storage state triggerd by both mechanical and optical stimulation without applying extra gate voltages. The device demonstrates excellent characteristics with high programming/erasing current ratio > 10(7), performance stability over 200 cycles and retention time excess 105 s. The extremely high photoresponsivity of MoS2 optical memory similar to 12000 A/W is firstly reported. In addition, the stable flexibility enables integrated devices feasibility for wearable memories in image capturing and recording. The tribotronic-optoelectronic dual-gate memory opens up a new route to development of future human-robot interaction system integrating both sensing and storage.

Automated summary

The novel MoS2 nonvolatile memory combined with nanographene as floating gate enables multilevel storage state triggered by both mechanical and optical stimulation without needing extra gate voltages. The device demonstrates high programming/erasing current ratio, performance stability over cycles, and retention time exceeding 105 seconds. The extremely high photoresponsivity of MoS2 optical memory and stable flexibility make it feasible for integrated devices in wearable applications.