4.8 Article

Multibit tribotronic nonvolatile memory based on van der Waals heterostructures

期刊

NANO ENERGY
卷 83, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.nanoen.2021.105785

关键词

Multibit tribotronic nonvolatile memory; van der Waals heterostructures; Triboelectric nanogenerator; Tribotronics; Logic inverter

资金

  1. China National Key Research and Development Plan Project from Minister of Science and Technology, China [2016YFA0202703]
  2. National Natural Science Foundation of China [51872031, 61904013, 52073032]
  3. University of Chinese Academy of Sciences [E0E48909]
  4. Beijing Nova Program [Z191100001119047]

向作者/读者索取更多资源

This study introduces a new multibit tribotronic nonvolatile memory based on a graphene/hexagonal boron nitride/molybdenum disulfide van der Waals heterostructure and triboelectric nanogenerator, showing promising performance in modulation of programming/erasing states through external mechanical actions, long retention time, stable switching behavior, and multilevel data storage capability. Additionally, a memory inverter circuit utilizing the triboelectric potential as input signals demonstrates the potential of tribotronic devices for various applications in human-robot interactions, self-powered wearable devices, and intelligent instrumentation.
Low power and multifunctional nonvolatile memories are promising candidates for processing massive data in the Internet of Things era. However, the storage states in conventional memory devices are under the restricted control by electrical or optical signals. Herein, a new multibit tribotronic nonvolatile memory (T-NVM) based on a graphene/hexagonal boron nitride/molybdenum disulfide van der Waals heterostructure and triboelectric nanogenerator (TENG) is proposed. The programming/erasing states can be modulated by the triboelectric potential, which is determined by changing the distance between the two triboelectrification layers. Under the modulation of external mechanical actions, the device exhibits a high on/off ratio of 10(5) via manipulating mechanical distance from - 0.2 mm to + 0.2 mm, a long retention time up to 6000 s, a stable switching behavior for over 100 cycles, and a multilevel data storage capability of 14 stages by different external stimuli. Furthermore, a memory inverter circuit employing the triboelectric potential as input signals can serve as the conversion of logical signals. This work proves the great potential of tribotronic devices for direct interaction with external environment in lower power and broadening diverse applications of human-robot interactions, self-powered wearable devices, and intelligent instrumentation.

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