期刊
NANO ENERGY
卷 83, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2021.105783
关键词
Atomically thin 2D carbon nitride sheets; Spin polarization; DFT calculations; Visible-light photocatalytic water splitting
类别
资金
- Xidian University
- Fundamental Research Funds for the Central Universities [JB191402]
- National Natural Science Foundation of Shaanxi Province [2019JCW-17, 2020JCW15]
By fluorination followed by thermal defluorination in Se vapor, strong visible-light absorption band is achieved in Se-doped carbon nitride (Se-CNs), expanding the absorption edge of CNs and dramatically improving the electron structure, leading to enhanced solar energy conversion efficiency.
Atomically thin 2D carbon nitride sheets (CNs) became one of the most promising solar energy conversion materials. However, the application of CNs is still limited due to two reasons: (i) the bandgap of CNs is wider than its counterpart due to the quantum size effect, which reduces its effective utilization of the entire solar spectrum, and (ii) the visible-light photocatalytic activity of CNs is still low due to its faster recombination of photogenerated carriers than photocatalytic reaction. Here, we achieve a strong visible-light absorption band in CNs through fluorination followed by thermal defluorination in Se vapor (Se-CNs). Experimental results and theoretical calculations confirm that the formation of cyano groups accompanied with in-situ Se doping expands the absorption edge of CNs from 416 to 584 nm. More importantly, a downward electron spin polarization in the CNs structure improves dramatically the efficiency of charge separation and surface catalysis reaction. The hydrogen generation rate of Se-CNs with 3 wt% Pt under visible-light irradiation (> 420 nm) reaches up to 5411.2 ?mol h-1 g-1 that is 176.5 times of the hydrogen generation of CNs. Additionally, the visible-light photocatalytic oxygen evolution of Se-CNs acquires tremendous improvements. This work provides a new approach for improving electron structure of atomically thin 2D non-metal semiconductor materials.
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