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O Mitrofanov et al.
APPLIED PHYSICS LETTERS (2003)
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping
ML Nakarmi et al.
APPLIED PHYSICS LETTERS (2003)
Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N
V Kuryatkov et al.
APPLIED PHYSICS LETTERS (2003)
High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer
H Miyake et al.
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH (2003)
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
JK Sheu et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2003)
AlGaN layers grown on GaN using strain-relief interlayers
CQ Chen et al.
APPLIED PHYSICS LETTERS (2002)
Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation
JY Duboz et al.
JOURNAL OF APPLIED PHYSICS (2002)
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
N Biyikli et al.
APPLIED PHYSICS LETTERS (2002)
Influence of pyramidal defects on photoluminescence of Mg-doped AlGaN/GaN superlattice structures
J Bai et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2002)
Submicron technology for III-nitride semiconductors
T Palacios et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2002)
Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode
CJ Collins et al.
APPLIED PHYSICS LETTERS (2002)
Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN -: art. no. 205202
LS Vlasenko et al.
PHYSICAL REVIEW B (2002)
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
JP Zhang et al.
APPLIED PHYSICS LETTERS (2002)
Comparative performance analysis of the MWIR and LWIR focal plane array starring imaging infrared systems
EO Narlis
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES (2002)
Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
EL Waldron et al.
APPLIED PHYSICS LETTERS (2001)
Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
V Adivarahan et al.
APPLIED PHYSICS LETTERS (2001)
Runaway effects in nanoscale group-III nitride semiconductor structures
SM Komirenko et al.
PHYSICAL REVIEW B (2001)
III nitrides and UV detection
E Muñoz et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2001)
Selective growth of GaN/AlGaN microstructures by metalorganic vapor phase epitaxy
T Kato et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2001)
Crystal structure of 3,4,6,7,15,16,17,18,19,20,21,27-Dodecahydro-2,5,8-trioxa-16,20-diazatetracyclo[20.4.1.16,200.09,14]heptacosa-9,11,13,22,24,26(1)-hexaene
T Hökelek et al.
ANALYTICAL SCIENCES (2001)
Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy
G Namkoong et al.
APPLIED PHYSICS LETTERS (2000)
Activation energy, capture cross section, and emission frequency of the trap level in unintentionally doped n-type GaN epilayers grown on sapphire substrates in a nitrogen-rich atmosphere
WH Jung et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2000)
High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors
B Yang et al.
ELECTRONICS LETTERS (2000)
UV photoemission study of AlGaN grown by metalorganic vapor phase epitaxy
T Kozawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2000)
The first step toward CUORE: Cuoricino, a thermal detector array to search for rare events
A Alessandrello et al.
NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS (2000)
Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
SA Nikishin et al.
APPLIED PHYSICS LETTERS (2000)
Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes
C Pernot et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS (2000)
Uncooled barium strontium titanium focal plane array detection for mid-infrared Fourier transform spectroscopic imaging
AS Haka et al.
APPLIED SPECTROSCOPY (2000)
High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy
LK Li et al.
APPLIED PHYSICS LETTERS (2000)
Thermal activation energies of Mg in GaN : Mg measured by the Hall effect and admittance spectroscopy
DJ Kim et al.
JOURNAL OF APPLIED PHYSICS (2000)
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