Influence of N2O/TEGa Ratio on Deposition of β-Ga2O3 Films and Performance of Au-β-Ga2O3-Au Solar-Blind Photodetectors

In this study, a series of beta-Ga2O3 films are prepared by using triethylgallium (TEGa) and nitrous oxide (N2O) as precursors to explore the effect of N2O/TEGa ratio on the characteristics of beta-Ga2O3 films. A metal/semiconductor/metal (MSM)-type solar blind ultraviolet (UV) photodetector (PD) is fabricated using as-prepared beta-Ga2O3 film. It is found that an increment of N2O/TEGa ratio tends to suppress the oxygen vacancies in beta-Ga2O3 film so the device performance can be significantly improved. This work gives a deep insight into the impact of TEGa/N2O ratio for depositing beta-Ga2O3 on the film quality, the surface morphology, the chemical composition and the device performance for UV PDs.

Automated summary

A series of beta-Ga2O3 films were prepared using TEGa and N2O as precursors to investigate the impact of N2O/TEGa ratio. The study found that increasing the N2O/TEGa ratio can suppress oxygen vacancies in beta-Ga2O3 films and significantly improve device performance. This research provides insight into the influence of TEGa/N2O ratio on the quality, surface morphology, chemical composition, and device performance of UV PDs.