Communication-Phosphoric Acid Based Proton Conducting Polymer Electrolytes for Organic Field Effect Transistor Gate Dielectrics

A phosphoric acid (H3PO4)-polyvinyl alcohol (PVA) electrolyte was demonstrated as a gate dielectric for electrolyte-gated field-effect transistors (EGFETs). These devices exhibited high performance with sub 1 V operation, a high ON/OFF ratio >10(5) and a low subthreshold swing of 90 mV/decade. The results show the strong viability of proton conducting polymer electrolytes as gate dielectrics which open the door for further development of low-power EGFETs.

Automated summary

The phosphoric acid-polyvinyl alcohol electrolyte has been demonstrated as an effective gate dielectric for electrolyte-gated field-effect transistors, showing high performance with sub 1 V operation, high ON/OFF ratio >10^5, and low subthreshold swing of 90 mV/decade. This indicates the strong potential of proton conducting polymer electrolytes as gate dielectrics for low-power EGFET devices.