Defect analysis of crystalline Si solar cells by learning radiation-induced defects in Si

This paper presents analytical results for improving crystalline Si solar cells, analyzed using our knowledge in radiation-induced defects in Si. This study suggests that key issues for realizing higher performance Si solar cells are decrease in carbon concentration of less than 1 x 10(14) cm(-3). Defect introduction rates of B-i-O-2i center induced by light illumination are compared with those of Bi-Oi center induced by 1-MeV electron irradiations in this study. Surface recombination velocity degradation of Si solar cells due to 1-MeV electron irradiations is compared with surface degradation of Si solar cells under light illumination by considering P-b center generation.

Automated summary

The key to improving crystalline Si solar cells is reducing carbon concentration to less than 1 x 10(14) cm(-3), while the comparison between defect introduction rates induced by light illumination and electron irradiations sheds light on performance enhancement. Surface recombination velocity degradation caused by electron irradiations and surface degradation due to light illumination are also compared in this study.