期刊
AIP ADVANCES
卷 11, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0049577
关键词
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资金
- Air Force Office of Scientific Research [FA9550-19-1-0082]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF9071]
- National Institute of Standards and Technology [70NANB17H301]
Measurements of the planar Hall effect and anisotropic magnetoresistance in polycrystalline films of topological insulator Bi85Sb15 show behavior similar to in-plane field transport in metallic ferromagnetic thin films, with differing amplitudes and sign reversal near 160 K. Comparisons with reported planar Hall effect of topological insulators and Weyl semimetals are made, discussing possible scenarios for anisotropic backscattering of charge carriers in this non-magnetic alloy.
Measurements of the planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) in polycrystalline films of topological insulator Bi85Sb15 are reported. The observation of PHE and AMR in these films of carrier density approximate to 2 x 10(19) electrons/cm(3) is like the behavior of in-plane field transport in thin films of metallic ferromagnets. However, the amplitudes of PHE (Delta rho (PHE)) and AMR (Delta rho (xx)) are at variance. Delta rho (PHE) and Delta rho (xx) also undergo a sign reversal near approximate to 160 K. We compare these results with the reported PHE of topological insulators and Weyl semimetals and discuss possible scenarios for anisotropic backscattering of charge carriers in this non-magnetic alloy.
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