期刊
SCIENTIFIC REPORTS
卷 11, 期 1, 页码 -出版社
NATURE RESEARCH
DOI: 10.1038/s41598-021-87825-4
关键词
-
资金
- Air Force Office of Scientific Research (AFOSR) [W911NF1910002]
- National Science Foundation [ECCS-1542174]
- U.S. Department of Defense (DOD) [W911NF1910002] Funding Source: U.S. Department of Defense (DOD)
This study presents the first assessment of doping in Te-doped GaAsSb nanowires using various surface analytical techniques. The results show the influence of doping on the properties of nanowires and compare the outcomes from different analysis methods.
We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin probe microscopy (SKPM). The NWs were grown using Ga-assisted molecular beam epitaxy with a GaTe captive source as the dopant cell. Te-incorporation in the NWs was associated with a positive shift in the binding energy of the 3d shells of the core constituent elements in doped NWs in the XPS spectra, a lowering of the work function in doped NWs relative to undoped ones from UPS spectra, a significantly higher photoresponse in C-AFM and an increase in surface potential of doped NWs observed in SKPM relative to undoped ones. The carrier concentration of Te-doped GaAsSb NWs determined from UPS spectra are found to be consistent with the values obtained from simulated I-V characteristics. Thus, these surface analytical tools, XPS/UPS and C-AFM/SKPM, that do not require any sample preparation are found to be powerful characterization techniques to analyze the dopant incorporation and carrier density in homogeneously doped NWs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据