期刊
SCIENTIFIC REPORTS
卷 11, 期 1, 页码 -出版社
NATURE PORTFOLIO
DOI: 10.1038/s41598-021-87321-9
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资金
- IITP grant in KIST - Korean government (MSIT) [20190004340011001]
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [2018R1A2A1A05023214]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2016R1A6A1A03012877]
- Korean government (MSIT) [NRF- NRF-2019R1I1A1A01060334]
- Samsung Electronics
- Yonsei University
The study reported the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots on GaAs using molecular beam epitaxy, demonstrating a self-aligned type-II band alignment and a high internal quantum efficiency.
We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy. Using transmission electron microscopy and scanning electron microscopy images, we confirmed that the QDs, which comprised zinc-blende crystal structures with hexagonal shapes, were successfully grown through the formation of a nanowire from a Ga droplet, with reduced strain between GaAs and GaSb. Photoluminescence (PL) peaks of GaSb capped by a GaAs layer were observed at 1.11 eV, 1.26 eV, and 1.47 eV, assigned to the QDs, a wetting-like layer (WLL), and bulk GaAs, respectively, at the measurement temperature of 14 K and excitation laser power of 30 mW. The integrated PL intensity of the QDs was significantly stronger than that of the WLL, which indicated well-grown GaSb QDs on GaAs and the generation of an interlayer exciton, as shown in the power- and temperature-dependent PL spectra, respectively. In addition, time-resolved PL data showed that the GaSb QD and GaAs layers formed a self-aligned type-II band alignment; the temperature-dependent PL data exhibited a high equivalent internal quantum efficiency of 15 +/- 0.2%.
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