4.8 Review

The Role of Dimensionality on the Optoelectronic Properties of Oxide and Halide Perovskites, and their Halide Derivatives

期刊

ADVANCED ENERGY MATERIALS
卷 12, 期 4, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/aenm.202100499

关键词

defects; electronic dimensionality; light‐ emitting diodes; perovskite‐ inspired materials; perovskites; photovoltaics; structural dimensionality

资金

  1. Royal Academy of Engineering under the Research Fellowship scheme [RF\201718\1701]
  2. Isaac Newton Trust [Minute 19.07(d)]
  3. Downing College Cambridge through the Kim and Juliana Silverman Research Fellowship
  4. Graduate Assistance in Areas of National Need (GAANN) fellowship
  5. DTP studentship - EPSRC [EP/N509620/1]
  6. Royal Academy of Engineering Chair in Emerging technologies grant [CIET1819_24]
  7. EPSRC Centre of Advanced Materials for Integrated Energy Systems (CAM-IES) [EP/P007767/1]
  8. EPSRC [EP/P007767/1] Funding Source: UKRI

向作者/读者索取更多资源

This review article examines the role of structural and electronic dimensionality on oxide and halide perovskites, as well as lead-free alternatives to halide perovskites, emphasizing the significant influence of dimensionality reduction on carrier/exciton-phonon coupling.
Halide perovskite semiconductors have risen to prominence in photovoltaics and light-emitting diodes (LEDs), but traditional oxide perovskites, which overcome the stability limitations of their halide counterparts, have also recently witnessed a rise in potential as solar absorbers. One of the many important factors underpinning these developments is an understanding of the role of dimensionality on the optoelectronic properties and, consequently, on the performance of the materials in photovoltaics and LEDs. This review article examines the role of structural and electronic dimensionality, as well as form factor, in oxide and halide perovskites, and in lead-free alternatives to halide perovskites. Insights into how dimensionality influences the band gap, stability, charge-carrier transport, recombination processes and defect tolerance of the materials, and the impact these parameters have on device performance are brought forward. Particular emphasis is placed on carrier/exciton-phonon coupling, which plays a significant role in the materials considered, owing to their soft lattices and composition of heavy elements, and becomes more prominent as dimensionality is reduced. It is finished with a discussion of the implications on the classes of materials future efforts should focus on, as well as the key questions that need to be addressed.

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