Multifunctional antiferromagnetic materials with giant piezomagnetism and noncollinear spin current

We propose a new type of spin-valley locking (SVL), named C-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the C-paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the C-paired SVL in monolayer V2Se2O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications. Quantum degrees of freedom, such as spin or valleys, lie at the basis of many intriguing phenomena. In this theory work, the authors present a new type of spin-valley locking enabled by a crystalline symmetry, which allows for the generation of valley polarizations and net magnetization via strain, and non-collinear spin currents via charge currents.

Automated summary

The study introduces a new type of spin-valley locking enabled by crystalline symmetry, allowing for the generation of valley polarizations, net magnetization, and non-collinear spin currents, providing new possibilities for multifunctional antiferromagnetic materials.