Characteristics of InGaN-based green laser diodes with additional InGaN hole reservoir layer

The injection of holes has an important impact on the performance of InGaN-based green laser diodes (LDs). In this work, we propose a new structure with InGaN hole reservoir layer (HRL) inserted between the last quantum barrier and the upper waveguide to improve the hole injection. It is found that the hole injection current is significantly increased due to the reduction of the hole effective barrier height. Furthermore, lower threshold current and higher output power are obtained, and the optical field leakage is effectively suppressed. Besides, the influences of thickness and In composition of the HRL are also investigated. It is more favorable to improve the properties of LDs when the HRL has a quite low-In content and a thickness of only nearly 11 nm.

Automated summary

The injection of holes plays a crucial role in the performance of InGaN-based green laser diodes (LDs). A new structure with InGaN hole reservoir layer (HRL) inserted between the last quantum barrier and the upper waveguide is proposed to enhance hole injection, resulting in significantly increased hole injection current and improved device properties. Adjusting the thickness and In composition of the HRL can further optimize the performance of LDs, with better results observed when the HRL has a low-In content and a thickness of around 11 nm.