Impact of annealing environment on performance of InWZnO conductive bridge random access memory

In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 104 cycles, while even longer retention time can be achieved at 85 degrees C, compared with the asdeposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.

Automated summary

This paper investigates the characteristics of CBRAM with IWZO as the switching material in different annealing atmospheres. It is found that annealing in nitrogen atmosphere can significantly improve the endurance cycles and resistance uniformity of the devices, potentially showing promise for future integrated display circuit applications.