Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

In this paper, a lightwave-derived low-temperature annealing method is demonstrated on solution-processed InGaZnO (IGZO) films for the flexible thin film transistors (TFTs) applications. It is demonstrated that lightwave-derived low-temperature annealing (similar to 230 degrees C) enhances the IGZO TFTs performance. Compared with the conventional furnace annealing process, lightwave annealing can effectively facilitate the decomposition of the IGZO precursors and form a smooth and dense IGZO film. With AlOx used as a dielectric layer, the optimal IGZO TFTs exhibit the carrier mobility of 13.4 cm(2)/Vs and a high on-current to off-current ratio (I-on/I-off) of > 10(5). This work indicates that lightwave annealing is a practical approach to fabricate the oxide semiconductors at a low annealing temperature and show great potential for the next-generation low-cost wearable device fabrication.

Automated summary

This study demonstrates the feasibility of using lightwave-derived low-temperature annealing to enhance the performance of IGZO TFTs, showing that lightwave annealing can effectively facilitate the decomposition of IGZO precursors and form smooth dense films compared to conventional furnace annealing. The optimal IGZO TFTs exhibit high carrier mobility and a large on-current to off-current ratio when AlOx is used as the dielectric layer, indicating great potential for the fabrication of low-cost wearable devices in the future.