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Hiroshi Tsuji et al.
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Mamatimin Abbas et al.
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Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range
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Fabrizio Torricelli et al.
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Katsumi Abe et al.
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Linfeng Lan et al.
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Role of Ga2O3-In2O3-ZnO channel composition on the electrical performance of thin-film transistors
A. Olziersky et al.
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Meyer-Neldel Rule and Extraction of Density of States in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Considering Surface Band Bending
Jaewook Jeong et al.
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Charlene Chen et al.
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Tze-Ching Fung et al.
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Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model
Toshio Kamiya et al.
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Jae-Heon Shin et al.
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P. Barquinha et al.
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Effective temperature for hopping transport in a Gaussian density of states
F. Jansson et al.
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